Balanced GaN HPA MMIC for 5G FR2 Band Base Station

Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...

GaN HEMT and MMIC Design and Evaluation

Analysis of Algan/gan Based Hemt Device for Mmic Design

In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the developme...

Ka-Band SiGe Receiver Front-End MMIC for Transponder Applications

A fully integrated, front-end Ka-band monolithic microwave integrated circuit (MMIC) was developed that houses an LNA (low noise amplifier) stage, a down-conversion stage, and output buffer amplifiers. The MMIC design employs a two-step quadrature down-conversion architecture, illustrated in the figure, which results in improved quality of the down-converted IF quadrature signals. This is due t...

Cryogenic MMIC Low Noise Amplifiers for W - Band and Beyond

We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation’s (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures...